LESHAN RADIO COMPANY, LTD.

1

3

2

LMBTH10LT1G

SOT–23

VHF/UHF Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

25

Vdc

Collector–Base Voltage

V

CBO

30

Vdc

Emitter–Base Voltage

V

EBO

3.0

Vdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P

D

225

mW

T

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

JA

556

°C/W

Total Device Dissipation

P

D

300

mW

Alumina Substrate, (2) T

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

JA

417

°C/W

Junction and Storage Temperature

T

–55 to +150

°C

DEVICE MARKING

LMBTH10LT1G = 3EM

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V

(BR)CEO

25

—

—

Vdc

(I

Collector–Base Breakdown Voltage

V

(BR)CBO

30

—

—

Vdc

(I

Emitter–Base Breakdown Voltage

V

(BR)EBO

3.0

—

—

Vdc

(I

Collector Cutoff Current

I

CBO

—

—

100

nAdc

( V

Emitter Cutoff Current

I

EBO

—

—

100

nAdc

( V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

COLLECTOR

1

BASE

Ordering Information

Device

Marking

Shipping

LMBTH10LT1G

3EM

3000/Tape&Reel

10000/Tape&Reel

LMBTH10LT3G

3EM

We declare that the material of product compliance with RoHS requirements.

Collector Cutoff Current

I

CBO

—

—

100

uAdc

( V

Emitter Cutoff Current

I

EBO

—

—

10

uAdc

( V

Rev.O 1/5