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AP18T10GI Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP18T10GI Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Fast Switching Performance BVDSS 100V ▼ Single Drive Requirement RDS(ON) 160mΩ ▼ Full Isolation Package ID 9A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃ /W Data and specifications subject to change without notice Storage Temperature Range Thermal Data Total Power Dissipation 28 -55 to 150 Operating Junction Temperature Range -55 to 150 Continuous Drain Current, VGS @ 10V 5.6 Pulsed Drain Current 1 30 Parameter Rating Drain-Source Voltage 100 Gate-Source Voltage +20 Continuous Drain Current, VGS @ 10V 200903052 RoHS-compliant Product 1 AP18T10GI 9 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) |
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