Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

600V

▼ Small Package Outline

300Ω

▼ Surface Mount Device

27mA

▼ Halogen Free & RoHS Compliant Product

Description

Absolute Maximum Ratings

Symbol

Units

V

V

mA

mA

mA

W

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

250

℃

/W

Data and specifications subject to change without notice

Thermal Data

Parameter

1

Operating Junction Temperature Range

-55 to 150

Continuous Drain Current

21

Pulsed Drain Current

1

100

Storage Temperature Range

Total Power Dissipation

0.5

-55 to 150

Gate-Source Voltage

+20

Continuous Drain Current

27

Parameter

Rating

Drain-Source Voltage

600

AP2332GN-HF

201008022

Halogen-Free Product

D

G

S

SOT-23

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-23 package is widely used for commercial-industrial applications.

G

D

S