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SI5853DC-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI5853DC-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 71239 S10-0547-Rev. D, 08-Mar-10 www.vishay.com 5 Vishay Siliconix Si5853DC MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Reverse Current vs. Junction Temperature 125 150 0.0001 1 20 TJ - Junction Temperature (°C) 0 255075 100 10 V 0.001 0.01 0.1 10 20 V Forward Voltage Drop 0.8 1.0 0.1 1 5 VF - Forward Voltage Drop (V) 0 0.2 0.4 TJ = 150 °C 0.6 TJ = 25 °C Capacitance 0 30 60 90 120 150 04 8 12 16 20 VKA - Reverse Voltage (V) |
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