Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

60

-

-

V

ΔBV

Breakdown Voltage Temperature Coefficient

-

0.05

-

V/℃

Static Drain-Source On-Resistance

2

-

-

80

mΩ

-

-

100

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

8.6

-

S

-

-

10

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

8

13

nC

Gate-Source Charge

-

3

-

nC

Gate-Drain ("Miller") Charge

-

4

-

nC

Turn-on Delay Time

2

-

7

-

ns

Rise Time

-

15

-

ns

Turn-off Delay Time

-

16

-

ns

Fall Time

-3

-

ns

Input Capacitance

-

720

1150

pF

Output Capacitance

-

77

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

45

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.2

V

t

rr

Reverse Recovery Time

-

28

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

27

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

2/4

AP9973GS/P

THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT

OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.