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STM32F102R8T6 Datasheet(PDF) 74 Page - STMicroelectronics

Part # STM32F102R8T6
Description  Medium-density USB access line,ARM-based 32b MCU with 64/128KB Flash,USB FS interface,6 timers, ADC&8 com. interfaces
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F102R8T6 Datasheet(HTML) 74 Page - STMicroelectronics

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Revision history
STM32F102x8, STM32F102xB
74/76
Doc ID 15056 Rev 4
8
Revision history
Table 55.
Document revision history
Date
Revision
Changes
23-Sep-2008
1
Initial release.
23-Apr-2009
2
I/O information clarified on page 1. Figure 1: STM32F102T8 medium-
density USB access line block diagram and Figure 5: Memory map
modified.
In Table 4: Medium-density STM32F102xx pin definitions: PB4, PB13,
PB14, PB15, PB3/TRACESWO moved from Default column to Remap
column.
PD value added for LQFP64 package in Table 8: General operating
conditions.
Note modified in Table 12: Maximum current consumption in Run mode,
code with data processing running from Flash and Table 14: Maximum
current consumption in Sleep mode, code running from Flash or RAM.
Figure 13, Figure 14 and Figure 15 show typical curves.
Figure 31: ADC accuracy characteristics modified.
Figure 33: Power supply and reference decoupling modified.
Table 19: High-speed external user clock characteristics and Table 20:
Low-speed external user clock characteristics modified.
ACCHSI max values modified in Table 23: HSI oscillator characteristics.
Small text changes.
22-Sep-2009
3
Note 5. updated in Table 4: Medium-density STM32F102xx pin
definitions.
VRERINT and TCoeff added to Table 11: Embedded internal reference
voltage. Typical IDD_VBAT value added in Table 15: Typical and maximum
current consumptions in Stop and Standby modes. Figure 12: Typical
current consumption on VBAT with RTC on versus temperature at
different VBAT values added.
fHSE_ext min modified in Table 19: High-speed external user clock
characteristics.
CL1 and CL2 replaced by C in Table 21: HSE 4-16 MHz oscillator
characteristics and Table 22: LSE oscillator characteristics (fLSE =
32.768 kHz), notes modified and moved below the tables. Table 23: HSI
oscillator characteristics modified. Conditions removed from Table 25:
Low-power mode wakeup timings.
Note 1. modified below Figure 18: Typical application with an 8 MHz
crystal.
Figure 25: Recommended NRST pin protection modified.
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in Section 5.3.10: EMC characteristics on page 46.
Jitter added to Table 26: PLL characteristics.
Table 41: SPI characteristics modified.
CADC and RAIN parameters modified in Table 45: ADC characteristics.
RAIN max values modified in Table 46: RAIN max for fADC = 12 MHz.
Small text changes.


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