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STB35N65M5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STB35N65M5 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 22 page Electrical characteristics STB/F/I/P/W35N65M5 8/22 Doc ID 15325 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM05422v1 RDS(on) 1.1 0.9 0.7 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 1.3 1.5 1.7 1.9 2.1 AM05423v1 VSD 0 20 ISD(A) (V) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ=-50°C TJ=150°C TJ=25°C AM05424v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 125 AM05416v1 E 300 200 100 0 0 20 RG( Ω) ( μJ) 10 30 400 40 ID=15A VGS=10V VCL=400V Eon Eoff 50 150 250 350 AM05421v1 |
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