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AM4540C Datasheet(PDF) 1 Page - Analog Power |
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AM4540C Datasheet(HTML) 1 Page - Analog Power |
1 / 3 page 1 AM4540C Analog Power August, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM4540_B These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. VDS (V) rDS(on) m(Ω)ID (A) 104 @ VGS = 4.5V 3.7 89 @ VGS = 10V 4.0 106 @ VGS = -4.5V -3.7 69 @ VGS = -10V -4.6 40 PRODUCT SUMMARY -40 P & N-Channel 40-V (D-S) MOSFET •Low r DS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SO-8 Surface Mount Package Saves Board Space • High power and current handling capability • Low side high current DC-DC Converter applications Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 Symbol N-Channel P-Channel Units VDS 40 -40 VGS 20 -20 TA=25 oC 4.0 -4.6 TA=70 oC3.3 -3.7 IDM ±50 ±50 IS 2.3 -2.1 A TA=25 oC 2.1 2.1 TA=70 oC1.3 1.3 TJ, Tstg oC Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady-State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA |
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