PMR290UNE

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 13 September 2011

3 of 16

NXP Semiconductors

PMR290UNE

20 V, 700 mA N-channel Trench MOSFET

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[3]

Measured between all pins.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

20

V

gate-source voltage

-8

8

V

drain current

[1]

-

700

mA

[1]

-

440

mA

peak drain current

-

2.8

A

total power dissipation

[2]

-

250

mW

[1]

-

300

mW

-

770

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

300

mA

ESD maximum rating

electrostatic discharge voltage

HBM

[3]

-

2000

V

Fig 1.

Normalized total power dissipation as a

function of junction temperature

Fig 2.

Normalized continuous drain current as a

function of junction temperature

−75

175

125

25

75

−25

017aaa123

40

80

120

(%)

0

−75

175

125

25

75

−25

017aaa124

40

80

120

(%)

0