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FDC6306P Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDC6306P
Description  Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDC6306P Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDC6306P Rev. C
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
µA, Referenced to 25°C-18
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 8 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -8 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA
-0.4
-0.9
-1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA, Referenced to 25°C3
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -1.9 A
VGS = -4.5 V, ID = -1.9 A @125
°C
VGS = -2.5 V, ID = -1.7 A
0.127
0.182
0.194
0.170
0.270
0.250
ID(on)
On-State Drain Current
VGS = -4.5 V, VDS =- 5 V
-5
A
gFS
Forward Transconductance
VDS = -5 V, ID = -1.9 A
4
S
Dynamic Characteristics
Ciss
Input Capacitance
441
pF
Coss
Output Capacitance
127
pF
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
67
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
6
12
ns
tr
Turn-On Rise Time
9
18
ns
td(off)
Turn-Off Delay Time
14
25
ns
tf
Turn-Off Fall Time
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6
39
ns
Qg
Total Gate Charge
3
4.2
nC
Qgs
Gate-Source Charge
0.7
nC
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -1.9 A,
VGS = -4.5 V
0.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.8
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.8 A (Note 2)
-0.8
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 130
°C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
b) 140
°C/W when
mounted on a 0.005 in2
pad of 2 oz. copper.
c) 180
°C/W when
mounted on a 0.0015 in2
pad of 2 oz. copper.


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