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IRGP4650D Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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IRGP4650D Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 12 page  www.irf.com © 2012 International Rectifier January 8, 2013 2 IRGP4650DPbF/IRGP4650D-EPbF Notes: VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Ris measured at T J of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter BreakdownVoltage 600 — — V VGE = 0V, IC = 100μA e V(BR)CES/T J T emperatureCoeff.of B reakdownVoltage —1.3 — mV/°C VGE = 0V, IC = 1mA (25°C-175°C) —1.60 1.90 IC = 35A, VGE = 15V, TJ = 25°C d VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 35A, VGE = 15V, TJ = 150°C d —2.00— IC = 35A, VGE = 15V, TJ = 175°C d VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 25 — S VCE = 50V, IC = 35A, PW = 60μs ICES Collector-to-Emitter Leakage Current — 1.0 70 μAVGE = 0V, VCE = 600V — 770 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 2.0 3.0 V IF = 35A —1.4 — IF = 35A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 69 104 IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 18 27 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 29 44 VCC = 400V Eon Turn-On Switching Loss — 390 508 IC = 35A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 632 753 μJRG = 10 , L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1022 1261 E nergy los s es include tail &diode revers e recovery td(on) Turn-On delay time — 46 56 IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 33 42 ns RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 105 117 tf Fall time — 44 54 Eon Turn-On Switching Loss — 1013 — IC = 35A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 929 — μJRG=10 , L=200μH, LS=150nH, TJ = 175°C Etotal Total Switching Loss — 1942 — E nergy los s es include tail &diode revers e recovery td(on) Turn-On delay time — 43 — IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 35 — ns RG = 10 , L = 200μH, LS = 150nH td(off) Turn-Off delay time — 127 — TJ = 175°C tf Fall time — 61 — Cies Input Capacitance — 2113 — pF VGE = 0V Coes Output Capacitance — 197 — VCC = 30V Cres Reverse Transfer Capacitance — 65 — f = 1.0Mhz TJ = 175°C, IC = 140A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp 600V Rg = 10 , VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp 600V Rg = 10 , VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 304 — μJTJ = 175°C trr Diode Reverse Recovery Time — 120 — ns VCC = 400V, IF = 35A Irr Peak Reverse Recovery Current — 25 — A VGE = 15V, Rg = 10 , L =210μH, Ls = 150nH Conditions |
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