TO-247AC datasheet(1/12 Pages) ETC1

Part #	TO-247AC

Description	INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODE

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INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGP4650DPbF

IRGP4650D-EPbF

January 8, 2013

1

TO-247AC

IRGP4650DPbF

TO-247AD

IRGP4650D-EP

G C

E

C

G C

E

C

E

G

n-channel

C

GC

E

Gate

Collector

Emitter

Applications

• Industrial Motor Drive

• Inverters

• UPS

• Welding

VCES = 600V

IC = 50A, TC = 100°C

tSC 5μs, TJ(max) = 175°C

VCE(on) typ. = 1.60V @ IC = 35A

Form

Quantity

IRGP4650DPbF

TO-247AC

Tube

25

IRGP4650DPbF

IRGP4650D-EPbF

TO-247AD

Tube

25

IRGP4650D-EPbF

Base part number

Package Type

Standard Pack

Orderable part number

Features

Benefits

Low VCE(ON) and Switching Losses

High efficiency in a wide range of applications and switching

frequencies

Square RBSOA and Maximum Junction Temperature 175°C

Improved reliability due to rugged hard switching performance

and higher power capability

Positive VCE (ON) Temperature Coefficient

Excellent current sharing in parallel operation

5μs short circuit SOA

Enables short circuit protection scheme

Lead-Free, RoHS compliant

Environmentally friendly

Absolute Maximum Ratings

Parameter

Max.

Units

V

CES

Collector-to-Emitter Voltage

600

V

I

C @ TC = 25°C

Continuous Collector Current

76

I

C @ TC = 100°C

Continuous Collector Current

50

I

CM

Pulse Collector Current, VGE = 15V

d

105

A

I

LM

Clamped Inductive Load Current, VGE = 20V

c

140

I

F @ TC = 25°C

Diode Continous Forward Current

76

I

F @ TC = 100°C

Diode Continous Forward Current

50

I

FM

Diode Maximum Forward Current

140

V

GE

Continuous Gate-to-Emitter Voltage

±20

V

Transient Gate-to-Emitter Voltage

±30

P

D @ TC = 25°C

Maximum Power Dissipation

268

W

P

D @ TC = 100°C

Maximum Power Dissipation

134

T

J

Operating Junction and

-55 to +175

T

ST G

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RJC (IGBT)

Junction-to-Case (IGBT)

f

–––

0.56

°C/W

RJC (Diode)

Junction-to-Case (Diode)

f

–––

1.0

RCS

Case-to-Sink (flat, greased surface)

–––

0.24

–––

RJA

Junction-to-Ambient (typical socket mount)

–––

40

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