FDC6322C datasheet(2/7 Pages) FAIRCHILD

Part #	FDC6322C

Description	Dual N & P Channel , Digital FET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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DMOS Electrical Characteristics (T

A = 25

OC unless otherwise noted )

Symbol

Parameter

Conditions

Type Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

N-Ch

25

V

GS = 0 V, ID = -250 µA

P-Ch

-25

∆BV

DSS/∆TJ

Breakdown Voltage Temp. Coefficient

I

D= 250 µA, Referenced to 25

oC

N-Ch

25

mV /

oC

I

D = -250 µA, Referenced to 25

oC

P-Ch

-22

I

DSS

Zero Gate Voltage Drain Current

V

DS= 20 V, VGS= 0 V,

N-Ch

1

µA

T

J = 55°C

10

I

DSS

Zero Gate Voltage Drain Current

V

DS =-20 V, VGS = 0 V,

P-Ch

-1

µA

T

J = 55°C

-10

I

GSS

Gate - Body Leakage Current

V

GS = 8 V, VDS= 0 V

N-Ch

100

nA

V

GS = -8 V, VDS= 0 V

P-Ch

-100

nA

ON CHARACTERISTICS (Note 2)

∆V

GS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

o C

N-Ch

-2.1

mV /

oC

I

D= -250 µA, Referenced to 25

o C

P-Ch

2.1

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID= 250 µA

N-Ch

0.65

0.85

1.5

V

DS = VGS, ID= -250 µA

P-Ch

-0.65

-0.86

-1.5

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 2.7 V, ID = 0.2 A

N-Ch

3.8

5

Ω

T

J =125°C

6.3

9

V

GS = 4.5 V, ID = 0.4 A

3.1

4

V

GS = -2.7 V, ID = -0.25 A

P-Ch

1.22

1.5

T

J =125°C

1.65

2.4

V

GS = -4.5 V, ID = -0.5 A

0.87

1.1

I

D(ON)

On-State Drain Current

V

GS = 2.7 V, VDS = 5 V

N-Ch

0.2

A

V

GS = -2.7 V, VDS = -5 V

P-Ch

-0.5

g

FS

Forward Transconductance

V

DS = 5 V, ID= 0.4 A

N-Ch

0.2

S

V

DS = -5 V, ID= -0.5 A

P-Ch

0.8

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

N-Channel

N-Ch

9.5

pF

V

DS= 10 V, VGS= 0 V,

P-Ch

62

C

oss

Output Capacitance

f = 1.0 MHz

N-Ch

6

P-Channel

P-Ch

35

C

rss

Reverse Transfer Capacitance

V

DS= -10 V, VGS = 0V,

N-Ch

1.3

f = 1.0 MHz

P-Ch

9.5

FDC6322C.Rev B1

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