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FDG6306P Datasheet(HTML) 3 Page - Fairchild Semiconductor

Part No. FDG6306P
Description  P-Channel 2.5V Specified PowerTrench MOSFET
Download  5 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDG6306P Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDG6306P Rev C (W)
Typical Characteristics
0
0.4
0.8
1.2
1.6
2
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
-3.5V
-2.5V
-2.0V
VGS = -4.5V
-3.0V
0.75
1
1.25
1.5
1.75
2
2.25
2.5
0
0.5
1
1.5
2
-ID, DRAIN CURRENT (A)
VGS = -2.5V
-3.0V
-3.5V
-4.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
o
C)
ID = -0.6A
VGS = -4.5V
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
4.5
5
-VGS , GATE TO SOURCE VOLTAGE (V)
ID = -0.3 A
TA = 125
o
C
TA = 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
o
C
25
o
C
125
o
C
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
o
C
25
o
C
-55
o
C
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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