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FDG6322C Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDG6322C Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type Min Typ Max Units t D(on) Turn - On Delay Time N-Channel N-Ch 5 10 nS V DD = 5 V, ID = 0.5 A, P-Ch 7 15 t r Turn - On Rise Time V GS = 4.5 V, RGEN = 50 Ω N-Ch 4.5 10 nS P-Ch 8 16 t D(off) Turn - Off Delay Time P-Channel N-Ch 4 8 nS V DD = -5 V, ID = -0.5 A, P-Ch 55 80 t f Turn - Off Fall Time V GS = -4.5 V, RGEN = 50 Ω N-Ch 3.2 7 nS P-Ch 35 60 Q g Total Gate Charge N-Channel N-Ch 0.29 0.4 nC V DS= 5 V, ID = 0.22 A, P-Ch 1.1 1.5 Q gs Gate-Source Charge V GS = 4.5 V N-Ch 0.12 nC P- Channel P-Ch 0.31 Q gd Gate-Drain Charge V DS = -5 V, ID = -0.41 A, N-Ch 0.03 nC V GS = -4.5 V P-Ch 0.29 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.25 A P-Ch -0.25 V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 0.5 A (Note 2) N-Ch 0.8 1.2 V V GS = 0 V, IS = -0.5 A (Note 2) P-Ch -0.85 -1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415 OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6322C Rev.F |
Similar Part No. - FDG6322C |
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Similar Description - FDG6322C |
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