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FDN335N Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDN335N Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN335N Rev. C Typical Characteristics (continued) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 °C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=270 o C/W TA=25 o C 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms VGS = 4.5V SINGLE PULSE RθJA = 270 oC/W TA = 25 oC RDS(ON) LIMIT 0 1 2 3 4 5 00.5 11.5 22.5 33.5 4 Qg, GATE CHARGE (nC) ID = 1.7A VDS = 5V 10V 15V 0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. |
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