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FDN342P Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDN342P
Description  P-Channel 2.5V Specified PowerTrench™ MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDN342P Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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FDN342P Rev. B
FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
August 1999
Features
• -2 A, -20 V. R
DS(ON) = 0.08 Ω @ VGS = -4.5 V
R
DS(ON) = 0.13 Ω @ VGS = -2.5 V.
• Rugged gate rating (±12V).
• High performance trench technology for extremely
low R
DS(ON).
• Enhanced power SuperSOTTM-3 (SOT-23).
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
- Continuous
(Note 1a)
-2
A
- Pulsed
-10
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDN342P
FDN342P
7’’
8mm
3000 units
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Applications
• Load switch
• Battery protection
• Power management
G
D
S
SuperSOT -3
TM
D
S
G


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