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FDN342P Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDN342P
Description  P-Channel 2.5V Specified PowerTrench™ MOSFET
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDN342P Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDN342P Rev. B
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
µA,Referenced to 25°C
-16
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -12 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA
-0.6
-1.05
-1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -2 A
VGS = -4.5 V, ID = -2 A,TJ=125
°C
VGS = -2.5 V, ID = -1.5 A
0.062
0.086
0.099
0.08
0.14
0.13
ID(on)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
-5
A
gFS
Forward Transconductance
VDS = -5 V, ID = -5 A
7
S
Dynamic Characteristics
Ciss
Input Capacitance
635
pF
Coss
Output Capacitance
175
pF
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V
f = 1.0 MHz
75
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
20
35
ns
tr
Turn-On Rise Time
8
16
ns
td(off)
Turn-Off Delay Time
9
18
ns
tf
Turn-Off Fall Time
VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6
19
32
ns
Qg
Total Gate Charge
6.3
9
nC
Qgs
Gate-Source Charge
1.5
nC
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -2 A
VGS = -4.5 V,
1.7
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -0.42 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250°C/Wwhenmounted
on a 0.02 in2pad of 2 oz. Cu.
b) 270°C/Wwhenmounted
on a mininum pad.


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