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FDN360 Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDN360
Description  Single P-Channel PowerTrenchTM MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDN360 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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FDN360P Rev. D
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
February 1999
Features
-2 A, -30 V. R
DS(on)
= 0.080
Ω @ V
GS
= -10 V
R
DS(on)
= 0.125
Ω @ V
GS
= -4.5 V.
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON).
High power and current handling capability.
©1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
- Continuous
(Note 1a)
-2
A
- Pulsed
-20
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
360
FDN360P
7’’
8mm
3000 units
G
D
S
SuperSOT -3
TM
D
S
G


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