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KA1H0565R-YDTU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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KA1H0565R-YDTU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page KA1M0565R/KA1H0565R 2 Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=30mH, VDD=50V, RG= 27 Ω, starting Tj=25°C Parameter Symbol Value Unit Maximum Drain voltage (1) VD,MAX 650 V Drain Gate voltage (RGS=1M Ω)VDGR 650 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 20 ADC Single pulsed avalanche energy (3) EAS 230 mJ Continuous drain current (TC=25 °C) ID 5.0 ADC Continuous drain current (TC=100 °C) ID 3.5 ADC Maximum Supply voltage VCC,MAX 30 V Input voltage range VFB −0.3 to VSD V Total power dissipation PD 140 W Derating 1.11 W/ °C Operating ambient temperature TA −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
Similar Part No. - KA1H0565R-YDTU |
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