1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Darlington Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

MPSA62

MPSA63

MPSA64

Unit

Collector – Emitter Voltage

VCES

–20

–30

Vdc

Collector – Base Voltage

VCBO

–20

–30

Vdc

Emitter – Base Voltage

VEBO

–10

Vdc

Collector Current — Continuous

IC

–500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –100 µAdc, VBE = 0)

MPSA62

MPSA63, MPSA64

V(BR)CES

–20

–30

—

—

Vdc

Collector Cutoff Current

(VCB= –15 Vdc, IE = 0)

MPSA62

(VCB = –30 Vdc, IE = 0)

MPSA63, MPSA64

ICBO

—

—

–100

–100

nAdc

Emitter Cutoff Current

(VEB = –10 Vdc, IC = 0)

IEBO

—

–100

nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPSA62/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSA62

thru

MPSA64

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

*Motorola Preferred Device

*

MPSA55, MPSA56

For Specifications,

See MPSA05, MPSA06 Data

COLLECTOR 3

BASE

2

EMITTER 1