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2W10G-E451 Datasheet(PDF) 3 Page - Vishay Siliconix |
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2W10G-E451 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page 2W005G thru 2W10G Vishay General Semiconductor Document Number: 88528 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Forward Characteristics Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 125 °C T J = 25 °C Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance 100 0.1 1 10 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 100 0.01 0.1 1 10 100 0.1 1 10 t - Heating Time (s) 0.220 (5.6) 0.160 (4.1) 0.388 (9.86) 0.348 (8.84) 1.0 (25.4) MIN. 0.060 (1.52) 0.020 (0.51) 0.032 (0.81) 0.028 (0.71) 0.348 (8.84) 0.308 (7.82) 0.220 (5.6) 0.180 (4.6) 0.220 (5.6) 0.180 (4.6) Case Style WOG |
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