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FDS6612A Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDS6612A
Description  Single N-Channel, Logic Level, PowerTrenchTM MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6612A Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FDS6612A Rev.C1
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
3
10
30
80
V
, DRAIN-SOURCE VOLTAGE (V)
DS
RDS(ON)
LIMIT
V
= 10V
SINGLE PULSE
R
=125°C/W
T = 25°C
GS
A
θJA
DC
1s
10ms
100ms
10s
1ms
100us
0.001
0.01
0.1
1
10
100
300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=125°C/W
T = 25°C
θJA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.4
1
2
5
10
30
50
100
200
500
1000
2000
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C iss
f = 1 MHz
V
= 0V
GS
Coss
Crss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R
(t) = r(t) * R
R
= 125°C/W
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
3
6
9
12
15
18
0
2
4
6
8
10
Q
, GATE CHARGE (nC)
g
I = 8.4A
D
10V
15V
V
= 5V
DS


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