FDS6612A datasheet(1/8 Pages) FAIRCHILD | Single N-Channel, Logic Level, PowerTrenchTM MOSFET

Part #	FDS6612A

Description	Single N-Channel, Logic Level, PowerTrenchTM MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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1 / 8 page

July 1998

FDS6612A

Single N-Channel, Logic Level, PowerTrench

TM MOSFET

General Description

Features

Absolute Maximum Ratings T

A = 25

oC unless otherwise noted

Symbol

Parameter

FDS6612A

Units

V

DSS

Drain-Source Voltage

30

V

GSS

Gate-Source Voltage

±20

V

I

D

Drain Current - Continuous

(Note 1a)

8.4

A

- Pulsed

40

P

D

Power Dissipation for Single Operation

(Note 1a)

2.5

W

(Note 1b)

1.2

(Note 1c)

1

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

50

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

FDS6612A Rev.C1

8.4 A, 30 V.

R

DS(ON) = 0.022 Ω

@ V

GS = 10 V,

R

DS(ON) = 0.030 Ω

@ V

GS = 4.5 V.

Fast switching speed.

Low gate charge.

High performance trench technology for extremely low

R

DS(ON).

High power and current handling capability.

SOT-23

SuperSOT

TM-8

SOIC-16

SO-8

SOT-223

SuperSOT

TM-6

This N-Channel

Logic

Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

1

6

7

8

2

4

3

5

S

D

S

SO-8

D

G

pin 1

FDS

6612A

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