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FDS8333C Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDS8333C Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  FDS8333C Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD Q1 VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.2 Drain–Source Diode Forward Voltage Q2 VGS = 0 V, IS = –1.3 A (Note 2) 0.8 –1.2 V trr Q1 IF = 4.1 A, diF/dt = 100 A/µs 16.3 Diode Reverse Recovery Time Q2 IF = –3.4 A, diF/dt = 100 A/µs 14.5 nS Qrr Q1 IF = 4.1 A, diF/dt = 100 A/µs 26.7 Diode Reverse Recovery Charge Q2 IF = –3.4 A, diF/dt = 100 A/µs 21.1 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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Similar Description - FDS8333C |
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