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TC595002ECB Datasheet(PDF) 4 Page - Microchip Technology |
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TC595002ECB Datasheet(HTML) 4 Page - Microchip Technology |
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4 / 20 page  TC59 DS21438C-page 4 2001-2012 Microchip Technology Inc. 4.0 THERMAL CONSIDERATIONS 4.1 Power Dissipation The amount of power dissipated internal to the low drop out linear regulator is the sum of the power dissipation within the linear pass device (P-Channel MOSFET), and the quiescent current required to bias the internal reference and error amplifier. The internal linear pass device power dissipation is calculated multiplying the voltage across the linear device times the current through the device. The input and output voltages are negative for the TC59. The power dissipation is calculated using the absolute value of the voltage difference between the input and output voltage. TABLE 4-1: MAXIMUM POWER DISSIPATION EQUATION 4-1: The internal power dissipation as a result of the bias current for the LDO internal reference and error amplifier is calculated by multiplying the ground or quiescent current times the input voltage. EQUATION 4-2: The total internal power dissipation is the sum of Equation 4-1 and Equation 4-2. EQUATION 4-3: For the TC59, the internal quiescent bias current is so low (3 A typical), the P D (Bias) term of the power dissipation equation can be ignored. The maximum power dissipation can be estimated by using the maximum input voltage and the minimum output voltage to obtain a maximum voltage differential between input and output and multiplying the maximum voltage differential by the maximum output current. EQUATION 4-4: For example, given the following conditions: VIN = -7.0V ±5% VOUT = -5.0V ±2% IOUT = 1mA to 40mA TAMBIENT (MAX) = 55°C PMAX = (7V X (1.05) – (5.0V X 0.98)) X 40mA PMAX = 98.0 milli-Watts To determine the junction temperature of the device, the thermal resistance from junction to air must be known. The SOT-23-3 RJA is estimated to be approximately 359°C/W when mounted on a 4-layer board. The RJA will vary with physical layout, airflow and other application specific conditions. The device junction temperature is determined by calculating the junction temperature rise above ambient, then adding the rise to the ambient temperature. EQUATION 4-5: JUNCTION TEMPERATURE (SOT-23 EXAMPLE) Package Type Maximum Power Dissipation SOT-23-3 150mW PD (Pass Device) = (VIN – VOUT) X IOUT PD (Bias) = VIN X IGND PTOTAL = PD (Pass Device) + PD (Bias) PMAX = (VIN (MAX) – VOUT (MIN)) X IOUT (MAX) TJUNCTION = PD (MAX) X RJA + TAMBIENT TJUNCTION = 98.0 milli-Watts X 359°C/W + 55°C TJUNCTION = 90.2°C |
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