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FDW2507N Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDW2507N
Description  Common Drain N-Channel 2.5V specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2507N Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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March 2003
2003 Fairchild Semiconductor Corporation
FDW2507N Rev C2
FDW2507N
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been
designed
using
Fairchild
Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Applications
• Li-Ion Battery Pack
Features
• 7.5 A, 20 V.
RDS(ON) = 19 m
Ω @ V
GS = 4.5 V
RDS(ON) = 23 m
Ω @ V
GS = 2.5 V
• Isolated source and drain pins
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package
S1
G1
S2
G2
D
D
D
D
TSSOP-8
Pin 1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
7.5
A
– Pulsed
30
Power Dissipation for Single Operation
(Note 1a)
1.6
PD
(Note 1b)
1.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2507N
FDW2507N
13’’
12mm
3000 units


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