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FDW2509NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDW2509NZ
Description  Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2509NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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January 2005
©2005 Fairchild Semiconductor Corporation
FDW2509NZ Rev C(W)
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
Features
7.1 A, 20 V. RDS(ON) = 20 m
Ω @ V
GS = 4.5 V
RDS(ON) = 26 m
Ω @ V
GS = 2.5 V
Extended VGSS range (
±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
ID
Drain Current
– Continuous
(Note 1a)
7.1
A
– Pulsed
30
PD
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
(Note 1b)
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2509NZ
FDW2509NZ
13’’
12mm
3000 units


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