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FDW2509NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDW2509NZ
Description  Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2509NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDW2509NZ Rev. C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
11
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
±12 V, V
DS = 0 V
± 10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
0.8
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 7.1 A
VGS = 2.5 V,
ID = 6.2 A
VGS = 4.5 V, ID = 7.1A, TJ=125
°C
15
18
20
20
26
29
m
ID(on) (Note 4) On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
30
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 7.1 A
36
S
Dynamic Characteristics
Ciss
Input Capacitance
1263
pF
Coss
Output Capacitance
327
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
179
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.9
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
11
20
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
12
22
ns
Qg
Total Gate Charge
13
19
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 7.1 A,
VGS = 4.5 V
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
1.2
V
trr
Diode Reverse Recovery Time
IF = 7.1 A,
diF/dt = 100 A/µs
20
nS
Qrr
Diode Reverse Recovery Charge
14
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4.
ID(on) parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics).


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