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ADM3101EARQZ-REEL1 Datasheet(PDF) 8 Page - Analog Devices |
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ADM3101EARQZ-REEL1 Datasheet(HTML) 8 Page - Analog Devices |
8 / 12 page ADM3101E Rev. C | Page 8 of 12 THEORY OF OPERATION The ADM3101E is a single-channel RS-232 line driver/receiver. Step-up voltage converters, coupled with level shifting trans- mitters and receivers, allow RS-232 levels to be developed while operating from a single 3.3 V supply. CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications. CIRCUIT DESCRIPTION The internal circuitry consists of the following main sections: • A charge pump voltage converter • A 3.3 V logic to an EIA/TIA-232E transmitter • An EIA/TIA-232E to a 3.3 V logic receiver ADM3101E GND +3.3V INPUT + + + C1 0.1µF 16V C2 0.1µF 16V T R +3.3V TO +6.6V VOLTAGE DOUBLER +6.6V TO –6.6V VOLTAGE INVERTER C1+ C1– C2+ C2– TIN ROUT CMOS INPUT CMOS OUTPUT RIN VCC V+ V– TOUT C5 0.1µF C3 0.1µF 6.3V C4 0.1µF 16V EIA/TIA-232E OUTPUT EIA/TIA-232E INPUT* *INTERNAL 5kΩ PULL-DOWN RESISTOR ON THE RS-232 INPUT. Figure 12. Typical Operating Circuit Charge Pump Voltage Converter The charge pump voltage converter consists of a 200 kHz oscil- lator and a switching matrix. The converter generates a ±6.6 V supply (when unloaded) from the 3.3 V input level. This is achieved in two stages by using a switched capacitor technique, as illustrated in Figure 13 and Figure 14. First, the 3.3 V input supply is doubled to +6.6 V by using C1 as the charge storage element. The +6.6 V level is then inverted to generate −6.6 V using C2 as the storage element. C3 is shown connected between V+ and VCC but is equally effective if connected between V+ and GND. The C3 and C4 capacitors are used to reduce the output ripple. The values are not critical and can be increased, if desired. Larger capacitors (up to 10 μF) can also be used in place of the C1, C2, C3, and C4 capacitors. GND C3 C1 S1 S2 S3 S4 V+ = 2VCC + + INTERNAL OSCILLATOR VCC VCC Figure 13. Charge Pump Voltage Doubler GND C4 C2 S1 S2 S3 S4 GND + + INTERNAL OSCILLATOR V+ V– = –(V+) FROM VOLTAGE DOUBLER Figure 14. Charge Pump Voltage Inverter 3.3 V Logic to EIA/TIA-232E Transmitter The transmitter driver converts the 3.3 V logic input levels into RS-232 output levels. When driving an RS-232 load with VCC = 3.3 V, the output voltage swing is typically ±6 V. Internally, the TIN pin has a weak pull-up that allows it to be driven by an open-drain output, but the maximum operating data rate is reduced when the TIN pin is driven by an open-drain pin. EIA/TIA-232E to 3.3 V Logic Receiver The receiver is an inverting level shifter that accepts the RS-232 input level and translates it into a 3.3 V logic output level. The input has an internal 5 kΩ pull-down resistor to ground and is protected against overvoltages of up to ±30 V. An unconnected input is pulled to 0 V by the internal 5 kΩ pull-down resistor, which, therefore, results in a Logic 1 output level for an uncon- nected input or for an input connected to GND. The receiver has a Schmitt trigger input with a hysteresis level of 0.4 V, which ensures error-free reception for both a noisy input and for an input with slow transition times. CMOS Input Voltage Thresholds The CMOS input and output pins (TIN and ROUT) of the ADM3101E are designed to interface with 1.8 V logic thresholds when VCC = 3.3 V. The CMOS input and output pins (TIN and ROUT) of the ADM3101E are also designed to interface with TTL/CMOS logic thresholds when VCC = 5 V. ESD Protection on RS-232 and CMOS I/O Pins All RS-232 (TOUT and RIN) and CMOS (TIN and ROUT) inputs and outputs are protected against electrostatic discharges (up to ±15 kV). HIGH BAUD RATE The ADM3101E features high slew rates, permitting data trans- mission at rates well in excess of the EIA/RS-232 specifications. The RS-232 voltage levels are maintained at data rates of up to 460 kbps, even under worst-case loading conditions, when TIN is driven by a push-pull output. The slew rate is internally controlled to less than 30 V/μs to minimize EMI interference. |
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