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FMB3946 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMB3946 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 3 page Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 200 MHz Cobo Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF Cibo Input Capacitance VCB = 5.0 V, f = 100 kHz 10 pF V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 30 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA hFE DC Current Gain IC = 100 µA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100mA, VCE = 1.0 V 40 70 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.9 V NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. NPN & PNP General Purpose Amplifier (continued) |
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Similar Description - FMB3946 |
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