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SI4435BDY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4435BDY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72123 S09-0767-Rev. D, 04-May-09 Vishay Siliconix Si4435BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0 18 30 6 12 Time (s) 24 1 100 600 10 10-1 10-2 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 DC 0.1 IDM Limited ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 Limited by R(DS)on* * VGS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70 °C/W 3. T JM TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM - |
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