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STY145N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY145N65M5
Description  N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY145N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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STY145N65M5
Electrical ratings
Doc ID 023718 Rev 2
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
138
A
ID
Drain current (continuous) at TC = 100 °C
87
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
552
A
PTOT
Total dissipation at TC = 25 °C
625
W
IAR
Max current during repetitive or single pulse avalanche
(pulse width limited by TJMAX)
17
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
2420
mJ
dv/dt(2)
2.
ISD ≤ 138 A, di/dt = 400 A/µs, VDD = 400 V, peak VDS < V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.2
°C/W
Rthj-amb Thermal resistance junction-ambient max
30
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C


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