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TPS51427RHBR Datasheet(PDF) 7 Page - Texas Instruments |
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TPS51427RHBR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 41 page  TPS51427 www.ti.com................................................................................................................................................ SLUS819B – APRIL 2008 – REVISED SEPTEMBER 2008 ELECTRICAL CHARACTERISTICS (continued) Over recommended free-air temperature range, VV5DRV = 5 V, VVIN = 12 V (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT LIMIT TRIPx Adjustment Range 0.2 2.0 V 4.75 5.25 TRIPx Source Current 0.2 V < VTRIPx < 2 V, TA = +25°C 5 µA (–5%) (+5%) TRIPx Current Temperature Coefficient on the basis of TA = +25°C (3) 2900 ppm/°C 13 27 GND – LLx, VTRIPx = 0.2 V 20 (–35%) (+35%) 42.5 57.5 GND – LLx, VTRIPx = 0.5 V 50 (–15%) (+15%) Current-Limit Threshold (Positive, mV Adjustable) 93 107 GND – LLx, VTRIPx = 1 V 100 (–7%) (+7%) 190 210 GND – LLx, VTRIPx = 2 V 200 (–5%) (+5%) 93 107 Current-Limit Threshold (Positive, VTRIPx = 5.0 V, GND – LLx (no temperature 100 mV Default) compensation) (–7%) (+7%) High threshold 3.0 3.2 3.3 V Fixed 100-mV OCL TRIPx Threshold Voltage Hysteresis 40 70 100 mV With respect to valley current limit threshold, Current Limit Threshold (Negative) –100% SKIPSEL = 5 V Zero-Crossing Current Limit SKIPSEL = 0 V, 2 V, or OPEN, GND – LLx –3.5 0 3.5 mV Threshold GATE DRIVERS Source, VBSTx-DRVHx = 0.1 V 1.0 3.6 DRVHx Gate-Driver Ω On-Resistance Sink, DRVHx-LLx = 0.1 V 0.8 2.6 Source, V5DRV-DRVLx = 0.1 V 1.2 4.0 DRVLx Gate-Driver On-Resistance Ω Sink, DRVLx-PGND = 0.1 V 0.6 1.5 DRVHx Gate-Driver Source VBSTx-LLx = 5 V, DRVHx = 2.0 V(3) 1.8 A Current DRVHx Gate-Driver Sink Current VBSTx-LLx = 5 V, DRVHx = 2.0 V(3) 1.6 A DRVLx Gate-Driver Source V5DRV-PGND = 5 V, DRVLx = 2.0 V(3) 1.4 A Current DRVLx Gate-Driver Sink Current V5DRV-PGND = 5 V, DRVLx = 2.0 V(3) 2.6 A DRVHx low (DRVHx = 1 V) to DRVLx high (DRVLx = 4 20 30 50 ns V), LLx = –0.05 V Dead Time DRVLx low (DRVLx = 1 V) to DRVHx high (DRVHx = 4 25 40 60 ns V), LLx = –0.05 V Internal BST_ Switch IVBSTx = 10 mA, V5DRV = 5 V, TA = +25°C 10 Ω On-Resistance VBSTx Leakage Current VVBSTx = 35 V, LLx = 28 V 0.01 2.0 µA (3) Ensured by design. Not production tested. Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): TPS51427 |
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