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FMB1020 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMB1020 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page V 0.85 1.0 Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA Base-Emitter Saturation Voltage VBE(sat) V 0.2 0.4 Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA Collector-Emitter Saturation Voltage VCE(sat) - 450 350 80 100 100 100 Vce = 1V, Ic = 100uA Vce = 1V, Ic = 10mA Vce = 1V, Ic = 100mA Vce = 5V, Ic = 150mA DC Current Gain hFE ON CHARACTERISTICS nA 50 Veb = 4 V Emitter Cutoff Current IEBO nA 50 Vce = 40 V Collector Cutoff Current ICES nA 50 Vcb = 50 V Collector Cutoff Current ICBO V 6 Ie = 10 uA Emitter to Base Voltage BVEBO V 60 Ic = 10 uA Collector to Base Voltage BVCBO V 45 Ic = 1.0 mA Collector to Emitter Voltage BVCEO OFF CHARACTERISTICS Units Max Min Test Conditions Parameter Symbol Electrical Characteristics T A = 25°C unless otherwise noted NPN & PNP Complementary Dual Transistor (continued) SMALL SIGNAL CHARACTERISTICS TYP dB 2.5 Vce = 5V, Ic = 100uA, Rs = 2kohms, f = 1 kHz Noise Figure NF MHz 300 Vce = 20V, Ic = 20mA, f = 100MHz Current Gain - Bandwidth Product fT pF 4.5 Vcb = 10V, f = 1MHz Output Capacitance COB Page 2 of 2 fmb1020.lwpPr10&68(Y4) © 1998 Fairchild Semiconductor Corporation |
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Similar Description - FMB1020 |
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