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STM32F405VGT6 Datasheet(PDF) 99 Page - STMicroelectronics

Part # STM32F405VGT6
Description  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F405VGT6 Datasheet(HTML) 99 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
Note:
For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
5.3.9
Internal clock source characteristics
The parameters given in Table 33 and Table 34 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 32. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
18.4
-
M
Ω
IDD
LSE current consumption
-
-
1
µA
gm
Oscillator Transconductance
2.8
-
-
µA/V
tSU(LSE)(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time
VDD is stabilized
-
2
-
s
ai17531
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F
32.768 kH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 33. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register
--
1
%
Factory-
calibrated
TA = –40 to
105 °C(2)
–8
-
4.5
%
TA = –10 to 85 °C(2)
–4
-
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)(3)
HSI oscillator
startup time
-2.2
4
µs
IDD(HSI)
HSI oscillator
power consumption
-60
80
µA


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