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FMBL1G200US60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FMBL1G200US60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A IGBT July 2001 Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMBL1G200US60 Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 200 A ICM (1) Pulsed Collector Current 400 A IF Diode Continuous Forward Current @ TC = 100°C 200 A IFM Diode Maximum Forward Current 400 A TSC Short Circuit Withstand Time @ TC = 100°C10 us PD Maximum Power Dissipation @ TC = 25°C 830 W TJ Operating Junction Temperature -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Viso Isolation Voltage @ AC 1minute 2500 V Mounting Torque Power Terminals Screw : M5 2.0 N.m Mounting Screw : M6 2.5 N.m FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • UL Certified No. E209204 • Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A • High input impedance • Fast & soft anti-parallel FWD Application • Boost (Step Up) Converter Internal Circuit Diagram C1 E1/C2 E2 G2 E2 Package Code : 7PM-BB |
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