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FMBS549 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FMBS549 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page FMBS549 PNP Low Saturation Transistor Absolute Maximum Ratings* TA = 25°C unless otherwise noted °C -55 to +150 Operating and Storage Junction Temperature Range TJ, TSTG A A 1 2 Collector Current- Continuous - Peak Pulse Current IC V 5 Emitter-Base Voltage VEBO V 35 Collector-Base Voltage VCBO V 30 Collector-Emitter Voltage VCEO Units Value Parameter Symbol *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. *Device mounted on a 1 in2 pad of 2 oz copper. °C/W 180 Thermal Resistance, Junction to Ambient, total RθJA mW 700 Total Device Dissipation* PD Units Max Characteristics Symbol Thermal Characteristics T A = 25°C unless otherwise noted © 1999 Fairchild Semiconductor fmbs549.lwp Rev A PrPB ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. Package: SuperSOT-6 single Mark : .S1 NC C E B C C Pin 1 |
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