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FMG1G100US60H Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FMG1G100US60H Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2002 Fairchild Semiconductor Corporation FMG1G100US60H Rev. A Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 100A TC = 25°C -- 1.9 2.8 V TC = 100°C -- 1.8 -- trr Diode Reverse Recovery Time IF = 100A di / dt = 200 A/us TC = 25°C -- 90 130 ns TC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 9 12 A TC = 100°C -- 12 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 405 790 nC TC = 100°C -- 780 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.31 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.7 °C/W RθCS Case-to-Sink (Conductive grease applied) 0.05 -- °C/W Weight Weight of Module -- 190 g |
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