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SI4562DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # SI4562DY-T1-E3
Description  N- and P-Channel 2.5-V (G-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4562DY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Vishay Siliconix
Si4835DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
1
0.01
0.001
0.1
10
100
TJ = 25 °C
TJ = 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
ID =5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
02
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ = 25 °C
TJ = 125 °C
ID =10A
0
10
20
30
40
50
Time (s)
10
1000
0.1
0.01
0.001
100
1
Safe Operating Area
0.01
1
100
0.01
0.1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
1ms
10 ms
100 ms
0.1110
10
TA = 25 °C
Single Pulse
Limited byRDS(on)*
1s
10 s
DC
100


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