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SI4835DDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI4835DDY-T1-E3
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4835DDY-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4835DDY
New Product
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
•TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
d
Qg (Typ.)
- 30
0.018 at VGS = - 10 V
- 13
22 nC
0.030 at VGS = - 4.5 V
- 10
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
± 25
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 13
A
TC = 70 °C
- 10.5
TA = 25 °C
- 8.7a, b
TA = 70 °C
- 7.7a, b
Pulsed Drain Current
IDM
- 50
Continuous Source-Drain Diode Current
TC = 25 °C
IS
- 4.6
TA = 25 °C
2.0a, b
Avalanche Current
L = 0.1 mH
IAS
- 20
Single-Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
5.6
W
TC = 70 °C
3.6
TA = 25 °C
2.5a, b
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c
t
≤ 10 s
RthJA
39
50
°C/W
Maximum Junction-to-Foot
Steady State
RthJF
18
22
S
G
D
P-Channel MOSFET
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)


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