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TPS54316PWPR Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54316PWPR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 22 page TPS54311, TPS54312 TPS54313, TPS54314 TPS54315, TPS54316 SLVS416B − FEBRUARY 2002 − REVISED APRIL 2005 www.ti.com 4 ELECTRICAL CHARACTERISTICS (continued) TJ = −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain(1) 26 dB Error amplifier unity gain bandwidth(1) 3 5 MHz PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (ex- cluding dead time) 10 mV overdrive(1) 70 85 ns SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V Enable hysteresis voltage, SS/ENA(1) 0.03 V Falling edge deglitch, SS/ENA(1) 2.5 µs TPS54311 2.6 3.3 4.1 TPS54312 3.5 4.5 5.4 Internal slow start time(1) TPS54313 4.4 5.6 6.7 ms Internal slow-start time(1) TPS54314 2.6 3.3 4.1 ms TPS54315 3.6 4.7 5.6 TPS54316 4.7 6.1 7.6 Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 1.5 V 1.5 2.3 4 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage(1) 3 %Vref Power good falling edge deglitch(1) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.30 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT Current limit trip point VI = 3 V, output shorted(1) 4 6.5 A Current limit trip point VI = 6 V, output shorted(1) 4.5 7.5 A Current limit leading edge blanking time (1) 100 ns Current limit total response time (1) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) 135 150 165 °C Thermal shutdown hysteresis(1) 10 °C OUTPUT POWER MOSFETS r Power MOSFET switches VI = 6 V(2) 59 88 mΩ rDS(on) Power MOSFET switches VI = 3 V(2) 85 136 mΩ (1) Specified by design (2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design |
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