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FM24V10 Datasheet(HTML) 1 Page - Cypress Semiconductor

Part No. FM24V10
Description  1Mb Serial 3V F-RAM Memory
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Maker  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
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FM24V10 Datasheet(HTML) 1 Page - Cypress Semiconductor

 
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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-84463 Rev. **
Revised February 25, 2013
FM24V10
1Mb Serial 3V F-RAM Memory
Features
1M bit Ferroelectric Nonvolatile RAM
Organized as 131,072 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM24VN10)
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current < 150 A (typ. @ 100KHz)
90 A Standby Current (typ.)
5 A Sleep Mode Current (typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM24V10 is a 1-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM24V10 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance
orders
of
magnitude
higher
than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V10 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time
of EEPROM
can cause
data
loss.
The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V10 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2C) protocol. The
FM24VN10 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
NC
A1
A2
VSS
VDD
WP
SCL
SDA
1
2
3
4
8
7
6
5
Pin Name
Function
A1, A2
Device Select Address
SDA
Serial Data/address
SCL
Serial Clock
WP
Write Protect
VDD
Supply Voltage
VSS
Ground


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