QFET

QFET

QFET

©2000 Fairchild Semiconductor International

January 2001

Rev. A1, January 2001

FQD13N10 / FQU13N10

100V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQD13N10 / FQU13N10

Units

Drain-Source Voltage

100

V

Drain Current

10

A

6.3

A

Drain Current

- Pulsed

(Note 1)

40

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

95

mJ

Avalanche Current

(Note 1)

10

A

Repetitive Avalanche Energy

(Note 1)

4.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

2.5

W

40

W

- Derate above 25°C

0.32

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

3.13

°C/W

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D