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FQD1N50B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQD1N50B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2000 Fairchild Semiconductor International May 2000 Rev. A, May 2000 QFET QFET QFET QFETTM FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features • 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 3.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD1N50 / FQU1N50 Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 1.1 A - Continuous (TC = 100°C) 0.7 A IDM Drain Current - Pulsed (Note 1) 4.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 80 mJ IAR Avalanche Current (Note 1) 1.1 A EAR Repetitive Avalanche Energy (Note 1) 2.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 25 W - Derate above 25°C 0.2 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 5.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G I-PAK FQU Series D-PAK FQD Series G S D G S D |
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