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IR5001STRPBF Datasheet(PDF) 10 Page - International Rectifier |
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IR5001STRPBF Datasheet(HTML) 10 Page - International Rectifier |
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10 / 12 page  IR5001S & (PbF) 10 www.irf.com APPLICATION INFORMATION The IR5001S is designed for multiple active ORing and reverse polarity protection applications with minimal number of external components. Examples of typical circuit connections are shown below. Negative Rail ORing/Reverse Polarity Protection A typical connection of the IR5001S in negative rail Active ORing or reverse polarity protection is shown in Fig. 17. In this example, IR5001S is biased directly from the positive rail. However, any of the biasing schemes shown in Fig. 16 can be used. For input ORing in carrier-class communications boards, one IR5001S is used per feed. This is shown in Fig.1. An evaluation kit is available for typical system boards, with input voltages of negative 36V to negative 75V, and for power levels from 30W to about 300W. The p/n for the evaluation kit is IRDC5001-LS48V. This evaluation kit contains detailed design considerations and in-circuit performance data for the IR5001S. Positive Rail ORing / Ground ORing in Communications Boards An example of a typical connection in positive rail ORing is shown in Fig. 18. Typical applications are inside redundant AC-DC and DC-DC power supplies, or on-board ORing. For positive rail ORing, an additional Vbias voltage above the positive rail is needed to bias the IR5001S. An evaluation kit for high-current 12V positive rail ORing is available under p/n IRAC5001- HS100A, demonstrating performance of the IR5001S at 100A output current. Considerations for the Selection of the Active ORing N-Channel MOSFET Active ORing FET losses are all conduction losses, and depend on the source-drain current and RDS(on) of the FET. The conduction loss could be virtually eliminated if a FET with very low RDS(on) was used. However, using arbitrarily low RDS(on) is not desirable for three reasons: 1. Turn off propagation delay. Higher RDS(on) will provide more voltage information to the internal comparator, and will result in faster FET turn off protection in case of short-circuit of the source (less voltage disturbance on the redundant bus). 2. Undetected reverse (drain to source) current flow. With the asymmetrical offset voltage, some small current can flow from the drain to source of the ORing FET and be undetected by the IR5001S. The amount of undetected drain- source current depends on the RDS(on) of the selected MOSFET and its RDS(on). To keep the reverse (drain-source) current below 5 – 10% of the nominal source-drain state, the RDS(on) of the selected FET should produce 50mV to 100mV of the voltage drop during nominal operation. 3. Cost. With properly selected RDS(on), Active ORing using IR5001S can be very cost competitive with traditional ORing while providing huge power loss reduction. For example, a FET with 20mOhm RDS(on) results in 60mV voltage drop at 3A; associated power savings compared to the traditional diode ORing (assuming typical 0.6V forward voltage drop) is ten fold(0.18W vs. 1.8W)! Now assume that FET RDS(on) was 10mOhm. The power loss would be reduced by additional 90mW, which is negligible compared to the power loss reduction already achieved with 20mOhm FET. But to get this negligible saving, the cost of the Active ORing FET would increase significantly. Vbias IR5001 Vcc FETch INP INN Gnd OUT FETst Vline Rbias + Vin + Vin - Load Redundant Vin - Vbias IR5001 Vcc FETch INP INN Gnd OUT FETst Vline Rbias + Vout + Vout - Redundant Vout + Load Figure. 18. Connection of INN,INP, and Gnd when the MOSFET is placed in the path of positive rail. Figure. 17 Connection of INN, INP, and Gnd for negative rail Active ORing or reverse polarity protection. |
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