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IR5001STRPBF Datasheet(PDF) 10 Page - International Rectifier

Part # IR5001STRPBF
Description  UNIVERSAL ACTIVE ORING CONTROLLER
Download  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR5001STRPBF Datasheet(HTML) 10 Page - International Rectifier

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IR5001S & (PbF)
10
www.irf.com
APPLICATION INFORMATION
The IR5001S is designed for multiple active ORing
and reverse polarity protection applications with
minimal number of external components. Examples
of typical circuit connections are shown below.
Negative Rail ORing/Reverse Polarity Protection
A typical connection of the IR5001S in negative
rail Active ORing or reverse polarity protection is
shown in Fig. 17. In this example, IR5001S is biased
directly from the positive rail. However, any of the
biasing schemes shown in Fig. 16 can be used.
For input ORing in carrier-class communications
boards, one IR5001S is used per feed. This is
shown in Fig.1. An evaluation kit is available for
typical
system
boards,
with
input
voltages
of
negative 36V to negative 75V, and for power levels
from 30W to about 300W. The p/n for the evaluation
kit is IRDC5001-LS48V. This evaluation kit contains
detailed
design
considerations
and
in-circuit
performance data for the IR5001S.
Positive Rail ORing / Ground ORing in
Communications Boards
An example of a typical connection in positive
rail ORing is shown in Fig. 18. Typical applications
are inside redundant AC-DC and DC-DC power
supplies, or on-board ORing. For positive rail ORing,
an additional Vbias voltage above the positive rail is
needed to bias the IR5001S.
An evaluation kit for high-current 12V positive
rail
ORing
is
available
under
p/n
IRAC5001-
HS100A,
demonstrating
performance
of
the
IR5001S at 100A output current.
Considerations for the Selection of the Active
ORing N-Channel MOSFET
Active ORing FET losses are all conduction
losses, and depend on the source-drain current and
RDS(on) of the FET. The conduction loss could be
virtually eliminated if a FET with very low RDS(on)
was used. However, using arbitrarily low RDS(on) is
not desirable for three reasons:
1.
Turn off propagation delay. Higher RDS(on) will
provide more voltage information to the internal
comparator, and will result in faster FET turn off
protection in case of short-circuit of the source
(less voltage disturbance on the redundant bus).
2.
Undetected reverse (drain to source) current
flow. With the asymmetrical offset voltage, some
small current can flow from the drain to source
of the ORing FET and be undetected by the
IR5001S. The amount of undetected drain-
source current depends on the RDS(on) of the
selected MOSFET and its RDS(on). To keep the
reverse (drain-source) current below 5 – 10% of
the nominal source-drain state, the RDS(on) of
the selected FET should produce 50mV to
100mV of the voltage drop during nominal
operation.
3.
Cost. With properly selected RDS(on), Active
ORing
using
IR5001S
can
be
very
cost
competitive
with
traditional
ORing
while
providing
huge
power
loss
reduction.
For
example, a FET with 20mOhm RDS(on) results in
60mV voltage drop at 3A; associated power
savings compared to the traditional diode ORing
(assuming typical 0.6V forward voltage drop) is
ten fold(0.18W vs. 1.8W)!
Now assume that
FET RDS(on) was 10mOhm. The power loss
would be reduced by additional 90mW, which is
negligible compared to the power loss reduction
already achieved with 20mOhm FET. But to get
this negligible saving, the cost of the Active
ORing FET would increase significantly.
Vbias
IR5001
Vcc
FETch
INP
INN
Gnd
OUT
FETst
Vline
Rbias
+
Vin +
Vin -
Load
Redundant Vin -
Vbias
IR5001
Vcc
FETch
INP
INN
Gnd
OUT
FETst
Vline
Rbias
+
Vout +
Vout -
Redundant Vout +
Load
Figure. 18. Connection of INN,INP, and Gnd when the
MOSFET is placed in the path of positive rail.
Figure. 17 Connection of INN, INP, and Gnd for negative
rail Active ORing or reverse polarity protection.


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