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CL32B475KBUYNNE Datasheet(PDF) 2 Page - Samsung semiconductor

Part # CL32B475KBUYNNE
Description  SPECIFICATION
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

CL32B475KBUYNNE Datasheet(HTML) 2 Page - Samsung semiconductor

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Vibration Test
Capacitance change :
within ±5%
Amplitude : 1.5mm
Tan δ, IR : initial spec.
From 10㎐ to 55㎐ (return : 1min.)
2hours × 3 direction (x, y, z)
Moisture
Capacitance change :
within ±12.5%
With rated voltage
Resistance
Tan δ :
0.125 max
40±2℃, 90~95%RH, 500+12/-0hrs
IR :
12.5㏁·㎌ or Over
High Temperature
Capacitance change :
within ±12.5%
With
of the rated voltage
Resistance
Tan δ :
0.125 max
Max. operating temperature
IR :
25㏁·㎌ or Over
1000+48/-0hrs
Temperature
Capacitance change :
within ±7.5%
1 cycle condition
Cycling
Tan δ, IR : initial spec.
Min. operating temperature
25℃
Max. operating temperature
25℃
5 cycle test
C. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max )
* For the more detail Specification, Please refer to the Samsung MLCC catalogue.
Performance
Test condition
150%


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