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RJH60M0DPQ-E0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH60M0DPQ-E0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page RJH60M0DPQ-E0 R07DS1085EJ0200 Rev.2.00 Page 2 of 9 Jun 13, 2013 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current / Diode reverse current ICES / IR — — 5 μA VCE = 600 V, VGE = 0 Gate to emitter leak current IGES — — ±1 μA VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 5 — 7 V VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) — 1.8 2.3 V IC = 22 A, VGE = 15 V Note3 VCE(sat) — 2.4 — V IC = 45 A, VGE = 15 V Note3 Input capacitance Cies — 1050 — pF VCE = 25 V VGE = 0 f = 1 MHz Output capacitance Coes — 75 — pF Reverse transfer capacitance Cres — 45 — pF Total gate charge Qg — 65 — nC VGE = 15 V VCE = 300 V IC = 22 A Gate to emitter charge Qge — 10 — nC Gate to collector charge Qgc — 39 — nC Turn-on delay time td(on) — 40 — ns VCC = 300 V VGE = 15 V IC = 22 A Rg = 5 Ω Inductive load Rise time tr — 25 — ns Turn-off delay time td(off) — 90 — ns Fall time tf — 55 — ns Turn-on energy Eon — 0.48 — mJ Turn-off energy Eoff — 0.38 — mJ Total switching energy Etotal — 0.86 — mJ Short circuit withstand time tsc 6 8 — μs Tc = 100 °C VCC ≤ 360 V, VGE = 15 V FRD Forward voltage VF — 1.4 1.9 V IF = 22 A Note3 FRD reverse recovery time trr — 100 — ns IF = 22 A diF/dt = 100 A/ μs FRD reverse recovery charge Qrr — 0.14 — μC FRD peak reverse recovery current Irr — 4.4 — A Notes: 3. Pulse test. |
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