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BC848BE6327 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BC848BE6327 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 13 page 2011-09-09 2 BC847...-BC850... Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BC847..., BC850... BC848..., BC849... VCEO 45 30 V Collector-emitter voltage BC847..., BC850... BC848..., BC849... VCES 50 30 Collector-base voltage BC847..., BC850... BC848..., BC849... VCBO 50 30 Emitter-base voltage BC847..., BC850... BC848..., BC849... VEBO 6 6 Collector current IC 100 mA Peak collector current, tp ≤ 10 ms ICM 200 Total power dissipation- TS ≤ 71 °C, BC847-BC850 TS ≤ 135 °C, BC847BL3-BC848BL3 TS ≤ 124 °C, BC847W-BC850W Ptot 330 250 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BC847-BC850 BC847BL3-BC848BL3 BC847W-BC850W RthJS ≤ 240 ≤ 60 ≤ 105 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
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