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SIE800DF-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIE800DF-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 Vishay Siliconix SiE800DF Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 20 24 °C/W Maximum Junction-to-Case (Drain Top)a Steady State RthJC (Drain) 1 1.2 Maximum Junction-to-Case (Source)a, c RthJC (Source) 2.8 3.4 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 34.5 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 2.2 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 11 A 0.006 0.0072 Ω VGS = 4.5 V, ID = 9 A 0.0095 0.0115 Forward Transconductancea gfs VDS = 15 V, ID = 11 A 50 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1600 pF Output Capacitance Coss 750 Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 18.5 A 23 35 nC VDS = 15 V, VGS = 4.5 V, ID = 18.5 A 12 18 Gate-Source Charge Qgs 5.6 Gate-Drain Charge Qgd 3 Gate Resistance Rg f = 1 MHz 1.3 1.95 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 15 25 Turn-Off Delay Time td(off) 15 25 Fall Time tf 815 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 15 25 Rise Time tr 15 25 Turn-Off Delay Time td(off) 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 50 A Pulse Diode Forward Currenta ISM 60 Body Diode Voltage VSD IS = 10 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 45 70 ns Body Diode Reverse Recovery Charge Qrr 41 65 nC Reverse Recovery Fall Time ta 21 ns Reverse Recovery Rise Time tb 24 |
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