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SIE800DF-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SIE800DF-T1-E3
Description  N-Channel 30 V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE800DF-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
Vishay Siliconix
SiE800DF
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
≤ 10 s
RthJA
20
24
°C/W
Maximum Junction-to-Case (Drain Top)a
Steady State
RthJC (Drain)
1
1.2
Maximum Junction-to-Case (Source)a, c
RthJC (Source)
2.8
3.4
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
34.5
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
- 6.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.5
2.2
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
25
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 11 A
0.006
0.0072
Ω
VGS = 4.5 V, ID = 9 A
0.0095
0.0115
Forward Transconductancea
gfs
VDS = 15 V, ID = 11 A
50
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1600
pF
Output Capacitance
Coss
750
Reverse Transfer Capacitance
Crss
120
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 18.5 A
23
35
nC
VDS = 15 V, VGS = 4.5 V, ID = 18.5 A
12
18
Gate-Source Charge
Qgs
5.6
Gate-Drain Charge
Qgd
3
Gate Resistance
Rg
f = 1 MHz
1.3
1.95
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
20
30
ns
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
15
25
Fall Time
tf
815
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
15
25
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
25
40
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
50
A
Pulse Diode Forward Currenta
ISM
60
Body Diode Voltage
VSD
IS = 10 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
45
70
ns
Body Diode Reverse Recovery Charge
Qrr
41
65
nC
Reverse Recovery Fall Time
ta
21
ns
Reverse Recovery Rise Time
tb
24


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